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Journal of Projectiles, Rockets, Missiles and Guidance >

2016 , Vol. 36 >Issue 1: 161 - 164

DOI: https://doi.org/10.15892/j.cnki.djzdxb.2016.01.040

CORRELATION TECHNOLOGY

THe Key Technique of High-capacity NAND Flash Memory

  • LIU Hanghang ,
  • LI Xiaoying ,
  • YANG Yungang ,
  • XUE Xiaole
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  • No.203 Research Institute of China Ordnance Industries, Xi'an 710065, China

Received date: 2015-04-21

  Online published: 2025-05-30

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Abstract

In order to improve reliability of NAND Flash data storage, basic idea of bad block of NAND Flash was discussed, three management strategies including bad block skip, bad block replacement and dynamic management were analyzed; Error checking and correcting algorithm were also described.In order to enhance efficiency of NAND Flash memory, Multi-Plane operation, Interleaved Die operation, pipeline storage technology of multi-chip were studied.Analysis shows that the effective management strategies and data check-out algorithm can increase NAND Flash data storage reliability, several operations sharing the program time can raise efficiency of NAND Flash memory.

Key words： NAND Flash; error management; data storage

Cite this article

LIU Hanghang , LI Xiaoying , YANG Yungang , XUE Xiaole . THe Key Technique of High-capacity NAND Flash Memory[J]. Journal of Projectiles, Rockets, Missiles and Guidance, 2016 , 36(1) : 161 -164 . DOI: 10.15892/j.cnki.djzdxb.2016.01.040

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